feb.1999 mitsubishi semiconductor triac ? BCR3AM low power use non-insulated type, planar passivation type BCR3AM application contactless ac switches, light dimmer, electric blankets, control of household equipment such as electric fan, solenoid drivers, small motor control, other general purpose control applications ?i t (rms) ........................................................................ 3a ?v drm ..............................................................400v/600v ?i fgt ! , i rgt ! , i rgt # ......................... 30ma (15ma) ] 6 symbol v drm v dsm parameter repetitive peak off-state voltage ] 1 non-repetitive peak off-state voltage ] 1 voltage class unit v v maximum ratings 8 400 500 12 600 720 symbol i t (rms) i tsm i 2 t p gm p g (av) v gm i gm t j t stg parameter rms on-state current surge on-state current i 2 t for fusing peak gate power dissipation average gate power dissipation peak gate voltage peak gate current junction temperature storage temperature weight conditions commercial frequency, sine full wave 360 conduction, t c =86 c 60hz sinewave 1 full cycle, peak value, non-repetitive value corresponding to 1 cycle of half wave 60hz, surge on-state current typical value unit a a a 2 s w w v a c c g ratings 3 30 3.7 3 0.3 6 0.5 C40 ~ +125 C40 ~ +125 1.6 ] 1. gate open. type name voltage class 23 1 3.2?.2 f 3.2?.1 10 max 4 23.7?.5 8 max 1.2?.1 4 max 12 min 0.8 0.8 2.5 2.5 1.5 min 10 max 4.5 max 1.55?.1 0.5 0.5 * * measurement point of case temperature outline drawing dimensions in mm to-202 24 1 3 1
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4 t 1 terminal t 2 terminal gate terminal t 2 terminal
feb.1999 3.8 0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4 10 2 7 5 3 2 10 1 7 5 3 2 10 0 7 5 3 2 10 e1 t c = 25?c 10 0 23 5710 1 23 5710 2 44 30 35 20 25 10 15 5 40 0 maximum on-state characteristics on-state current (a) on-state voltage (v) rated surge on-state current surge on-state current (a) conduction time (cycles at 60hz) mitsubishi semiconductor triac ? BCR3AM low power use non-insulated type, planar passivation type symbol i drm v tm v fgt ! v rgt ! v rgt # i fgt ! i rgt ! i rgt # v gd r th (j-c) (dv/dt) c parameter repetitive peak off-state current on-state voltage gate trigger voltage ] 2 gate trigger current ] 2 gate non-trigger voltage thermal resistance critical-rate of rise of off-state commutating voltage test conditions t j =125 c, v drm applied t c =25 c, i tm =4.5a, instantaneous measurement t j =25 c, v d =6v, r l =6 w , r g =330 w t j =25 c, v d =6v, r l =6 w , r g =330 w t j =125 c, v d =1/2v drm junction to case ] 4 ] 5 unit ma v v v v ma ma ma v c/w v/ m s typ. ? ? ? ? ? ? ? ? ? ? ? ! @ # ! @ # electrical characteristics limits min. ? ? ? ? ? ? ? ? 0.2 ? ] 3 max. 2.0 1.5 1.5 1.5 1.5 30 ] 6 30 ] 6 30 ] 6 ? 10 ? ] 2. measurement using the gate trigger characteristics measurement circuit. ] 3. the critical-rate of rise of the off-state commutating voltage is shown in the table below. ] 4. case temperature is measured at the t 2 terminal 1.5mm away from the molded case. ] 5. the contact thermal resistance r th (c-f) in case of greasing is 3 c/w. ] 6. high sensitivity (i gt 15ma) is also available. (i gt item 1 ) performance curves test conditions voltage class 8 12 v drm (v) 400 600 commutating voltage and current waveforms (inductive load) (dv/dt) c supply voltage time time time main current main voltage (di/dt)c v d (dv/dt)c min. 5 unit v/ m s 1. junction temperature t j =125 c 2. rate of decay of on-state commutating current (di/dt) c =e1.5a/ms 3. peak off-state voltage v d =400v
feb.1999 10 0 23 10 0 5710 1 23 5710 2 23 5710 3 10 2 7 5 3 2 10 1 7 5 3 2 7 5 3 2 10 ? v gd = 0.2v i fgt i, i rgt iii i rgt i v gt p g(av) = 0.3w p gm = 3w i gm = 0.5a maximum on-state power dissipation on-state power dissipation (w) rms on-state current (a) allowable case temperature vs. rms on-state current case temperature (?) rms on-state current (a) gate voltage (v) gate current (ma) gate trigger current vs. junction temperature junction temperature (?) gate trigger voltage vs. junction temperature junction temperature (?) 10 1 10 3 7 5 3 2 ?0 ?0 20 10 2 7 5 3 2 60 100 140 4 4 ?0 0 40 80 120 i fgt i, i rgt i i rgt iii typical example 10 1 10 3 7 5 3 2 ?0 ?0 20 10 2 7 5 3 2 60 100 140 4 4 ?0 0 40 80 120 typical example 5.0 4.0 3.0 2.0 1.0 4.5 3.5 2.5 1.5 0.5 0 4.0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 360 conduction resistive, inductive loads 130 110 90 70 50 120 100 80 60 40 30 4.0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 curves apply regardless of conduction angle 360 conduction resistive, inductive loads maximum transient thermal impedance characteristics transient thermal impedance (?/ w) conduction time (cycles at 60hz) 10 0 23 10 ? 5710 0 23 5710 1 23 5710 2 7 5 3 2 10 1 7 5 3 2 7 5 3 2 10 ? 23 10 2 5710 3 23 5710 4 23 5710 5 10 2 junction to ambient junction to case gate characteristics 100 (%) gate trigger current (t j = t?) gate trigger current (t j = 25?) 100 (%) gate trigger voltage ( t j = t c ) gate trigger voltage ( t j = 25 ? ) mitsubishi semiconductor triac ? BCR3AM low power use non-insulated type, planar passivation type
feb.1999 laching current vs. junction temperature laching current (ma) junction temperature (?) allowable ambient temperature vs. rms on-state current ambient temperature (?) rms on-state current (a) allowable ambient temperature vs. rms on-state current ambient temperature (?) rms on-state current (a) repetitive peak off-state current vs. junction temperature junction temperature (?) breakover voltage vs. junction temperature junction temperature (?) holding current vs. junction temperature junction temperature (?) 160 100 80 40 20 0 140 40 ?0 ?0 ?0 0 20 60 80 140 100120 60 120 typical example 140 40 ?0 ?0 ?0 0 20 60 80 100 120 10 5 7 5 3 2 10 4 7 5 3 2 10 3 7 5 3 2 10 2 typical example 10 1 10 3 7 5 3 2 ?0 ?0 20 10 2 7 5 3 2 60 100 140 4 4 ?0 0 40 80 120 typical example 130 100 90 60 40 30 4.0 0 0.5 1.5 2.5 3.5 50 80 70 110 120 1.0 2.0 3.0 50 50 t1.2 30 30 t1.2 natural convection all fins are black painted iron and greased curves apply regardless of conduction angle resistive, inductive loads 160 120 100 60 20 0 1.6 0.8 0.2 0 0.4 0.6 1.0 1.2 1.4 40 80 140 natural convection no fins curves apply regardless of conduction angle resistive, inductive loads 140 ?0 ?0 20 60 100 10 3 7 5 3 2 10 2 7 5 3 2 10 1 7 5 3 2 10 0 ?0 0 40 80 120 t 2 + , g + t 2 e , g e y t t 2 + , g typical example typical example distribution 100 (%) holding current ( t j = t c ) holding current ( t j = 25 ? ) 100 (%) repetitive peak off-state current ( t j = t c ) repetitive peak off-state current ( t j = 25 ? ) 100 (%) breakover voltage ( t j = t c ) breakover voltage ( t j = 25 ? ) mitsubishi semiconductor triac ? BCR3AM low power use non-insulated type, planar passivation type
feb.1999 commutation characteristics critical rate of rise of off-state commutating voltage (v/?) rate of decay of on-state commutating current (a /ms) gate trigger current vs. gate current pulse width gate current pulse width (?) 100 (%) gate trigger current ( tw ) gate trigger current ( dc ) 10 1 10 3 7 5 3 2 10 0 23 5710 1 10 2 7 5 3 2 23 5710 2 4 4 44 i rgt iii i rgt i i fgt i typical example 10 0 10 2 7 5 3 2 10 0 23 5710 1 10 1 7 5 3 2 23 5710 2 4 4 44 typical example t j = 125? i t = 4a t = 500? v d = 200v f = 3hz i quadrant iii quadrant minimum charac- teristics value voltage waveform current waveform v d t (dv/dt) c i t t t (di/dt) c breakover voltage vs. rate of rise of off-state voltage rate of rise of off-state voltage (v/?) 100 (%) breakover voltage ( dv/dt = xv/? ) breakover voltage ( dv/dt = 1v/? ) 23 10 1 5710 2 23 5710 3 23 5710 4 120 0 20 40 60 80 100 140 160 t j = 125? typical example i quadrant iii quadrant mitsubishi semiconductor triac ? BCR3AM low power use non-insulated type, planar passivation type 6 w 6 w 6 w 6v 6v 6v r g r g r g a v a v a v test procedure 1 test procedure 3 test procedure 2 gate trigger characteristics test circuits
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